|
|
Transport and Noise Characteristics of MOSFET Transistors
Chvátal, Miloš ; Hudec, Lubomír (referee) ; Koktavý, Bohumil (referee) ; Pavelka, Jan (advisor)
This doctoral thesis is focused on the analysis of transport characteristics of submicron and micron transistors MOSFET. The assumption is a constant gradient of concentration, which leads to the fact that the diffusion current density is independent of the distance from the source. Active energy was determined from temperature dependence. The proposed physical model made it possible to determine the value of access resistance between drain and source their temperature dependence. Based on the assumption that the divergence of the gradient of the current density in the channel is zero. IV characteristics of the transistor MOSFET are derived and conducted experimental monitoring current channel depending on the collector voltage for the series of samples with different channel lengths in a wide temperature range from 10 to 350 K. Information on the concentration of charge transport in the channel and the position of the Fermi level at the point of active trap, which is the source of RTS noise, is obtained from the analysis of the transport characteristics. Determining the concentration of charge transport and the position of the Fermi level is important because these variables determine the intensity of quantum transitions and their values are not the same throughout the length of the channel. It was experimentally proved from the analysis of the characteristics of RTS noise that concentration at the local channel decreases with increasing current at a constant voltage on the gate and a variable voltage at the collector. Further, the position of active traps of RTS noise was intended and it was found that this is located near the collector. Active trap is located at the point where the Fermi level coincides with energy level of the traps.
|
|
|
Anyalyze of photovoltaic cell by noise diagnostic
Husák, Marek ; Sládek, Petr (referee) ; Vaněk, Jiří (advisor)
The master’s thesis deals with the noise diagnostic in the solar cells. Describes the main kinds of noises. The samples were quality and reliability screened using noise reliability indicators. The samples were surveyed by measuring the I-V characteristics, the noise spectral density as a function of forward voltage and frequency. It was calculated the noise spectral density as a function of forward current.
|
|
|
Transport and Noise Characteristics of MOSFET Transistors
Chvátal, Miloš ; Hudec, Lubomír (referee) ; Koktavý, Bohumil (referee) ; Pavelka, Jan (advisor)
This doctoral thesis is focused on the analysis of transport characteristics of submicron and micron transistors MOSFET. The assumption is a constant gradient of concentration, which leads to the fact that the diffusion current density is independent of the distance from the source. Active energy was determined from temperature dependence. The proposed physical model made it possible to determine the value of access resistance between drain and source their temperature dependence. Based on the assumption that the divergence of the gradient of the current density in the channel is zero. IV characteristics of the transistor MOSFET are derived and conducted experimental monitoring current channel depending on the collector voltage for the series of samples with different channel lengths in a wide temperature range from 10 to 350 K. Information on the concentration of charge transport in the channel and the position of the Fermi level at the point of active trap, which is the source of RTS noise, is obtained from the analysis of the transport characteristics. Determining the concentration of charge transport and the position of the Fermi level is important because these variables determine the intensity of quantum transitions and their values are not the same throughout the length of the channel. It was experimentally proved from the analysis of the characteristics of RTS noise that concentration at the local channel decreases with increasing current at a constant voltage on the gate and a variable voltage at the collector. Further, the position of active traps of RTS noise was intended and it was found that this is located near the collector. Active trap is located at the point where the Fermi level coincides with energy level of the traps.
|
|
|
Anyalyze of photovoltaic cell by noise diagnostic
Husák, Marek ; Sládek, Petr (referee) ; Vaněk, Jiří (advisor)
The master’s thesis deals with the noise diagnostic in the solar cells. Describes the main kinds of noises. The samples were quality and reliability screened using noise reliability indicators. The samples were surveyed by measuring the I-V characteristics, the noise spectral density as a function of forward voltage and frequency. It was calculated the noise spectral density as a function of forward current.
|
guest ::
